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| Preliminary Technical Information HiPerFETTM Power MOSFET Q2-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6mm (0.062 in.) from case for 10s 50/60Hz, RMS IISOL 1mA t = 1min t = 1s Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C IXFN80N50Q2 VDSS = 500V ID25 = 80A RDS(on) 60m 250ns trr Maximum Ratings 500 500 30 40 80 320 80 5 20 890 -55 ... +150 150 -55 ... +150 300 2500 3000 1.5/13 1.3/ 11.5 30 V V V V A A A J V/ns W C C C C V~ V~ Nm/lb.in. Nm/lb.in. g miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Mounting torque Terminal connection torque Features Double metal process for low gate resistance miniBLOC, with Aluminium nitride isolation Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier Applications DC-DC converters Switched-mode and resonant-mode power supplies DC choppers Pulse generators Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 8mA VGS = 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125C Characteristic Values Min. Typ. Max. 500 3.0 5.5 200 100 5 60 V V nA A mA m VGS = 10V, ID = 0.5 * ID25, Note 1 (c) 2008 IXYS Corporation, All rights reserved DS99031B(05/08) IXFN80N50Q2 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 0.5 * ID25, Note 1 Characteristic Values Min. Typ. Max. 40 55 12.8 1640 440 29 25 60 11 250 60 120 S nF pF pF ns ns ns ns nC nC nC 0.14 C/W C/W SOT-227B Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 25A, -di/dt = 100A/s VR= 100V, VGS = 0V Characteristic Values Min. Typ. Max. 80 320 1.5 250 1.2 12 A A V ns C A Notes1: Pulse test, t 300s; duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN80N50Q2 Fig. 1. Output Characteristics @ 25C 80 VGS = 10V 70 60 8V 200 180 160 VGS = 10V 8V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes 50 40 30 20 10 0 0 1 2 3 S I D - Amperes 7V 140 120 100 80 60 40 6V 7V 6V 5V 4 5 6 20 0 0 2 4 6 8 5V 10 S 12 14 16 18 20 VD - Volts VD - Volts Fig. 3. Output Characteristics @ 125C 80 VGS = 10V 70 60 7V 2.8 3.2 Fig. 4. RDS(on) Normalized to I D = 40A Value vs. Junction Temperature VGS = 10V R D S ( o n ) - Normalized 2.4 2.0 1.6 1.2 0.8 0.4 ID = 80A ID = 40A I D - Amperes 50 6V 40 30 20 10 0 0 2 4 6 8 10 12 5V -50 -25 0 25 50 75 100 125 150 VD S - Volts TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Temperature 90 Fig. 5. RDS(on) Normalized to I D = 40A Value vs. Drain Current 3.0 2.6 VGS = 10V TJ = 125C 80 70 External Lead Current Limit R D S ( o n ) - Normalized I D - Amperes TJ = 25C 0 20 40 60 80 100 120 140 160 180 200 2.2 1.8 1.4 1.0 60 50 40 30 20 10 0.6 0 -50 -25 0 25 50 75 100 125 150 I D - Amperes T C - Degrees Centigrade (c) 2008 IXYS Corporation, All rights reserved IXFN80N50Q2 Fig. 7. Input Admittance 140 120 100 80 60 40 20 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 20 0 0 20 40 60 80 100 120 140 160 180 TJ = 125C 25C - 40C 120 TJ = - 40C 100 80 60 40 25C Fig. 8. Transconductance g f s - Siemens I D - Amperes 125C V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 240 200 160 120 80 40 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 9 TJ = 25C TJ = 125C 8 7 VDS = 250V ID = 40A IG = 10m A I D - Amperes Fig. 10. Gate Charge I S - Amperes VG S - Volts 6 5 4 3 2 1 0 0 40 80 120 G 160 200 240 280 V S D - Volts Q - nanoCoulombs Fig. 11. Capacitance 100000 1 Fig. 12. M aximum Transie nt The rmal Impe dance f = 1MHz Ciss Capacitance - pF - C / W Coss 10000 0.1 Z( t h ) Crss JC 1000 0.01 100 0 5 10 15 20 S 0.001 25 30 35 40 0.0001 0.001 0.01 0.1 1 10 VD - Volts Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_80N50Q2(95) 05-28-08-G |
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